Silicon Germanium Low Noise Amplifier for LTE,SGM13006H2 Replace BGA7H1BN6.
SGM13006H2.pdf優勢替代
FEATURES
? Insertion power gain: 12.3 dB
? Low noise figure: 0.85 dB
? Low current consumption: 4.3 mA
? Insertion Loss in bypass mode: -3.1 dB
? Operating frequencies: 1805 - 2690 MHz
? Two-state control: Bypass- and High gain-Mode
? Supply voltage: 1.5 V to 3.6 V
? Digital on/off switch (1V logic high level)
? Ultra small TSNP-6-2 leadless package
(footprint: 0.7 x 1.1 mm2)
? B7HF Silicon Germanium technology
? RF output internally matched to 50 Ω
? Only 1 external SMD component necessary
? Pb-free (RoHS compliant) package
PIN CONFIGUTION
