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Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications
FEATURES

? AEC-Q100 Qualified for Automotive Applications

  Device Temperature Grade 1

  TA = -40℃ to +125℃

? 5V Supply Voltage

? 7A Peak Source and 6A Peak Sink Currents

? Ultra-Fast, Low-side Gate Driver for GaN and Si 

  FETs

? Minimum Input Pulse Width: 1ns

? Up to 60MHz Operation

? Propagation Delay: 2.2ns (TYP), 3.5ns (MAX)

? Rise Time:

  WLCSP-0.88×1.28-6B: 500ps (TYP)

  TDFN-2×2-6DL: 600ps (TYP)

? Fall Time:

  WLCSP-0.88×1.28-6B: 460ps (TYP)

  TDFN-2×2-6DL: 590ps (TYP)

? Protection Features:

  Under-Voltage Lockout (UVLO)

  Over-Temperature Protection (OTP)

? Available in Green WLCSP-0.88×1.28-6B and 

  TDFN-2×2-6DL Packages

PIN CONFIGUTION
優勢替代
LMG1025-Q1 LMG1025-Q1.pdf

No.13848

FEATURES

AEC-Q100 grade 1 qualified

1.25-ns typical minimum input pulse width

2.6-ns typical rising propagation delay

2.9-ns typical falling propagation delay

300-ps typical pulse distortion

Independent 7-A pull-up and 5-A pull-down current

650-ps typical rise time (220-pF load)

850-ps typical fall time (220-pF load)

2-mm x 2-mm QFN package

Inverting and non-inverting inputs

UVLO and over-temperature protection

Single 5-V supply voltage










PIN CONFIGUTION
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