精品无码AV一区二区三区不卡,久久人人爽爽爽人久久久,99思思久热在线视频,久久久噜噜噜久久精品直播,潮喷高潮videossexohd潮喷

High Precision, Low Noise, Zero-Drift
SGM8558-4 SGM8558-4.pdf

No.11317

FEATURES

? 232mA Output Drive Capability

? Rail-to-Rail Input and Output

? Low Input Offset Voltage: -5μV

? Low Noise: 7.5nV/Hz

? 232mA Current Limitation

? Over-Temperature Protection

? Supply Voltage Range: 2.7V to 5.5V

? Supply Current: 0.85mA/Amplifier

? Gain-Bandwidth Product: 14MHz

? High Slew Rate: 8.5V/μs

? Voltage Gain (RL = 2kΩ): 120dB

? Power Supply Rejection Ratio: 110dB

? No Phase Reversal for Overdriven Inputs

? Unity-Gain Stable for Capacitive Loads to 780pF

DESCRIPTION

The SGM8558-1 (single), SGM8558-2 (dual), SGM8558-3 (single with shutdown) and SGM8558-4 (quad) high-output-drive CMOS operational amplifiers feature a peak output current of 232mA, rail-to-rail input and output capability from a single 2.7V to 5.5V supply. These amplifiers exhibit a high slew rate of 8.5V/μs and a gain-bandwidth product (GBP) of 14MHz. The SGM8558-1/2/3/4 can drive typical headset levels (32Ω), as well as bias an RF power amplifier in wireless handset applications.

These operational amplifiers are designed to be part of the power amplifier control circuitry, biasing RF power amplifiers in wireless headsets. The SGM8558-3 offers a shutdown feature that drives the output low. This ensures that the RF power amplifier is fully disabled when needed, preventing unconverted signals to the RF antenna.

The SGM8558-1/2/3/4 offer low input offset voltage, low input offset voltage drift, wide bandwidth and high-output drive.

APPLICATION CIRCUIT
PIN CONFIGUTION
網站地圖